RJH60F7DPQ-AO - Power IGBT, 600V, 50A, TO-247 (відновлені ніжки)
 

• Low collector to emitter saturation voltage
• VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching
• tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)